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Electrical Specificatio s TC
= 25
oC, Unless Otherwise Speci?ed
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
VF
-
-
2.1
V
-
-
1.7
V
IR
-
-
250
μA
-
-
1.5
mA
trr
s--45ns
s--50ns
ta
-
25
-
ns
tb
-
20
-
ns
Qrr
-
65
-
nC
CJ
IF
= 50
A
IF
= 50
A, TC
= 150oC
VR
= 600
V
VR
= 600
V, TC
= 150oC
IF
= 1
A, dIF/dt = 100
A/μ
IF
= 50
A, dIF/dt = 100
A/μ
IF
= 50
A, dIF/dt = 100
A/μs
IF
= 50
A, dIF/dt = 100
A/μs
IF
= 50
A, dIF/dt = 100
A/μs
VR
= 10
V, IF
= 0
A
-
140
-
pF
RθJC
-
-
1.0
oC/W
DEFINITIONS
VF
= Instantaneous forward voltage (pw = 300
μs, D = 2%).
IR
= Instantaneous reverse current.
Trr
= Reverse recovery time (See Figure 9), summation of ta
+ tb.
ta
= Time to reach peak reverse current (See Figure 9).
tb
= Time from peak IRM
to projected zero crossing of IRM
based on a straight line from peak IRM
through 25% of IRM
(See Figure 9).
Qrr
= Reverse recovery charge.
CJ
= Junction Capacitance.
RθJC
= Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
1
0 0.5
300
10
121.5
2.5
3
I
F
, FORWARD CURRENT (A)
25oC
175oC
100oC
100
0.01
0
600
400
300
200
100
0.1
1
10
1000
100
500
100oC
175oC
25oC
VR, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (
μ
A)
3000
RHRG5060
www.fairchildsemi.com
2
?2001
Fairchild
S
emiconductor Corporation
RHRG5060
Rev. C1
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